Manufacturer: Diodes Incorporated

Product Category: Bipolar Transistors – BJT

Mounting Style: SMD/SMT

Package / Case: SOT-23-3

Transistor Polarity: NPN

Configuration: Single

Collector- Emitter Voltage VCEO Max: 100 V

Collector- Base Voltage VCBO: 180 V

Emitter- Base Voltage VEBO: 7 V

Collector-Emitter Saturation Voltage: 215 mV

Maximum DC Collector Current: 2.5 A

Pd – Power Dissipation: 1.81 W

Gain Bandwidth Product fT: 175 MHz

Minimum Operating Temperature: – 55 C

Maximum Operating Temperature: + 150 C

Series: ZXTN25100

Packaging: Reel

Packaging: Cut Tape

Brand: Diodes Incorporated

DC Collector/Base Gain hfe Min: 120

DC Current Gain hFE Max: 300 at 10 mA, 2 V

Height: 1 mm

Length: 3.05 mm

Product Type: BJTs – Bipolar Transistors

Factory Pack Quantity: 3000

Subcategory: Transistors

Technology: Si

Width: 1.4 mm

Unit Weight: 0.000282 oz