Status Discontinued

Avalanche Energy Rating (Eas) 595.0  mJ

Configuration SINGLE WITH BUILT-IN DIODE

Drain Current-Max (ID) 5.0  A

Drain-source On Resistance-Max 2.5  ohm

DS Breakdown Voltage-Min 900.0  V

FET Technology METAL-OXIDE SEMICONDUCTOR

JESD-30 Code R-PSIP-T3

JESD-609 Code e0

Number of Elements 1.0

Number of Terminals 3

Operating Mode ENHANCEMENT MODE

Package Body Material PLASTIC/EPOXY

Package Shape RECTANGULAR

Package Style IN-LINE

Polarity/Channel Type N-CHANNEL

Pulsed Drain Current-Max (IDM) 15.0  A

Qualification Status Not Qualified

Surface Mount NO

Terminal Finish TIN LEAD

Terminal Form THROUGH-HOLE

Terminal Position SINGLE

Transistor Application SWITCHING

Transistor Element Material SILICON