The CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Summary of Features

Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance

Benefits

Highest system efficiency
Improved system efficiency at low switching frequencies
Increased power density at high switching frequencies
Higher system reliability
Reduced EMI