IKW40N65ES5
IKW40N65ES5 Transistor Original New Stock
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package / Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.35 V
Maximum Gate Emitter Voltage: – 20 V, + 20 V
Continuous Collector Current at 25 C: 79 A
Pd – Power Dissipation: 230 W
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 175 C
Series: TRENCHSTOP 5 S5
Packaging: Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Height: 20.7 mm
Length: 15.87 mm
Operating Temperature Range: – 40 C to + 175 C
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Width: 5.31 mm
Unit Weight: 1.340411 oz
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